1/6 preliminary data september 2002 STT1NF100 n-channel 100v - 0.7 w -1asot23-6l stripfet? ii power mosfet (1) i sd 1a, di/dt 350a/s, v dd v (br)dss ,t j t jmax. n typical r ds(on) =0.7 w n exceptional dv/dt capability n very low qg description this power mosfet is the latest development of st- microelectronics unique single feature size ? strip- based process. the resulting transistor shows ex- tremely high packing density for low on-resistance, rugged avalance characteristics and less critical align- ment steps therefore a remarkable manufacturing re- producibility. applications n dc-dc & dc-ac converters n dc motor control (disk drives, etc.) n synchronous rectification marking n stq0 absolute maximum ratings ( l ) pulse width limited by safe operating area type v dss r ds(on) i d STT1NF100 100v <0.8 w 1a symbol parameter value unit v ds drain-source voltage (v gs =0) 100 v v dgr drain-gate voltage (r gs =20k w ) 100 v v gs gate- source voltage 20 v i d drain current (continuous) at t c = 25c 1a i d drain current (continuous) at t c = 100c 0.6 a i dm ( ) drain current (pulsed) 4 a p tot total dissipation at t c = 25c 1.6 w derating factor 0.013 w/c dv/dt(1) peak diode recovery voltage slope 20 v/ns t stg storage temperature C55to150 c t j max. operating junction temperature sot23-6l internal schematic diagram
STT1NF100 2/6 thermal data (*) when mounted on fr-4 board of 1inch2 pad, 0.5oz cu electrical characteristics (tcase = 25 c unless otherwise specified) off on (1) dynamic rthj-amb(*) thermal resistance junction-ambient max 78 c/w t l maximum lead temperature for soldering purpose 260 c symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 100 v i dss zero gate voltage drain current (v gs =0) v ds = max rating 1a v ds = max rating, t c = 125 c 10 a i gss gate-body leakage current (v ds =0) v gs = 20v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds =v gs ,i d = 250a 2v r ds(on) static drain-source on resistance v gs =10v,i d = 0.5 a 0.7 0.8 w symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds =15v , i d =1a 1 s c iss input capacitance v ds =25v,f=1mhz,v gs =0 105 pf c oss output capacitance 20 pf c rss reverse transfer capacitance 9pf
3/6 STT1NF100 electrical characteristics (continued) switching on switching off source drain diode note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd =50v,i d = 0.5a r g = 4.7 w v gs =10v (see test circuit, figure 1) 4ns t r rise time 5.5 ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =50v,i d =1a, v gs =10v (see test circuit, figure 2) 4 1 1.5 6 nc nc nc symbol parameter test conditions min. typ. max. unit t d(off) t f turn-off-delay time fall time v dd = 50v, i d = 0.5a, r g =4.7 w, v gs = 10v (see test circuit, figure 1) 13 6.5 ns ns symbol parameter test conditions min. typ. max. unit i sd source-drain current 1 a i sdm (2) source-drain current (pulsed) 4 a v sd (1) forward on voltage i sd = 1a, v gs =0 1.2 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 1a, di/dt = 100a/s, v dd =20v,t j = 150c (see test circuit, figure 3) 45 60 2.7 ns nc a
STT1NF100 4/6 fig. 3: test circuit for diode recovery behaviour fig. 2: gate charge test circuit fig. 1: switching times test circuit for resistive load
5/6 STT1NF100 dim. mm mils min. typ. max. min. typ. max. a 0.90 1.45 0.035 0.057 a1 0.00 0.15 0.000 0.006 a2 0.90 1.30 0.035 0.051 b 0.25 0.50 0.010 0.020 c 0.09 0.20 0.004 0.008 d 2.80 3.10 0.110 0.122 e 2.60 3.00 0.102 0.118 e1 1.50 1.75 0.059 0.069 l 0.35 0.55 0.014 0.022 e 0.95 0.037 e1 1.90 0.075 aa2 a1 b e e1 c e l d e1 tsop-6 mechanical data
STT1NF100 6/6 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no res ponsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result f rom its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specificati ons mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devi ces or systems without express written approval of stmicroelectronics. ? the st logo is a registered trademark of stmicroelectronics ? 2002 stmicroelectronics - printed in italy - all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malt a - morocco singapore - spain - sweden - switzerland - united kingdom - united states. ? http://www.st.com
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